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SI4410DYTRPBF
- Manufacturer's Part No.:SI4410DYTRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 30V 10A 8-SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 800
- Available: 205934
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $6.44000 | US $6.44 |
10+ | US $5.79600 | US $57.96 |
30+ | US $4.50800 | US $135.24 |
100+ | US $3.70300 | US $370.30 |
500+ | US $3.54200 | US $1771.00 |
1000+ | US $3.22000 | US $3220.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.SI4410DYTRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.4986mm
- Length4.9784mm
- FET TypeN-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTape & Reel (TR)
- Published2001
- Rise Time7.7ns
- Vgs (Max)±20V
- Resistance13.5mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1 V
- Part StatusNot For New Designs
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating10A
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Contact PlatingTin
- Fall Time (Typ)44 ns
- Factory Lead Time14 Weeks
- Power Dissipation2.5W
- Terminal PositionDUAL
- Threshold Voltage1V
- Number of Elements1
- Turn On Delay Time11 ns
- Vgs(th) (Max) @ Id1V @ 250μA
- Voltage - Rated DC30V
- Dual Supply Voltage30V
- Radiation HardeningNo
- Turn-Off Delay Time38 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta
- Number of Terminations8
- Rds On (Max) @ Id, Vgs13.5m Ω @ 10A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)400 mJ
- Continuous Drain Current (ID)10A
- Pulsed Drain Current-Max (IDM)50A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds1585pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C10A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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