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SI4544DY-T1-GE3

  • Available: 5601

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI4544DY-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    N and P-Channel, Common Drain
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • FET Feature
    Logic Level Gate
  • Part Status
    Obsolete
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Power Dissipation
    2.4W
  • Number of Elements
    2
  • Turn On Delay Time
    13 ns
  • Vgs(th) (Max) @ Id
    1V @ 250μA (Min)
  • Radiation Hardening
    No
  • Element Configuration
    Dual
  • Max Power Dissipation
    2.4W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    35m Ω @ 6.5A, 10V
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    6.5A
  • Drain-source On Resistance-Max
    0.035Ohm
  • Pulsed Drain Current-Max (IDM)
    20A
  • Drain to Source Breakdown Voltage
    30V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-G8
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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