SI4559ADY-T1-E3
- Manufacturer's Part No.:SI4559ADY-T1-E3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET N/P-CH 60V 5.3A 8-SOIC
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 108235
- Available: 163159
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $9.40000 | US $9.40 |
10+ | US $8.46000 | US $84.60 |
30+ | US $6.58000 | US $197.40 |
100+ | US $5.40500 | US $540.50 |
500+ | US $5.17000 | US $2585.00 |
1000+ | US $4.70000 | US $4700.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI4559ADY-T1-E3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width4mm
- Height1.55mm
- Length5mm
- Weight506.605978mg
- FET TypeN and P-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2005
- Rise Time70ns
- Resistance120mOhm
- FET FeatureLogic Level Gate
- Part StatusActive
- Pbfree Codeyes
- Power - Max3.1W 3.4W
- SubcategoryOther Transistors
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)30 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberSI4559
- Factory Lead Time14 Weeks
- Power Dissipation2W
- Threshold Voltage1V
- Number of Channels2
- Number of Elements2
- Turn On Delay Time30 ns
- Vgs(th) (Max) @ Id3V @ 250μA
- Dual Supply Voltage60V
- Radiation HardeningNo
- Turn-Off Delay Time40 ns
- Element ConfigurationDual
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations8
- Rds On (Max) @ Id, Vgs58m Ω @ 4.3A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)4.3A
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)6.1 mJ
- Continuous Drain Current (ID)4.5A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds665pF @ 15V
- Current - Continuous Drain (Id) @ 25°C5.3A 3.9A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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