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SI4559ADY-T1-GE3

  • In Stock: 7500
  • Available: 153209
  • Updated: 22 HRS ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.96574US $0.97
10+US $0.64382US $6.44
30+US $0.48287US $14.49
100+US $0.38629US $38.63
500+US $0.35410US $177.05
1000+US $0.32191US $321.91

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI4559ADY-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    4mm
  • Height
    1.55mm
  • Length
    5mm
  • Weight
    506.605978mg
  • FET Type
    N and P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2011
  • Rise Time
    70ns
  • Resistance
    58MOhm
  • FET Feature
    Logic Level Gate
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    3.1W 3.4W
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Contact Plating
    Tin
  • Fall Time (Typ)
    30 ns
  • Base Part Number
    SI4559
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    2W
  • Terminal Position
    DUAL
  • Number of Channels
    2
  • Number of Elements
    2
  • Turn On Delay Time
    30 ns
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    40 ns
  • Max Power Dissipation
    3.4W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    58m Ω @ 4.3A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    4.3A
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    6.1 mJ
  • Continuous Drain Current (ID)
    4.5A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Breakdown Voltage
    60V
  • Input Capacitance (Ciss) (Max) @ Vds
    665pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    5.3A 3.9A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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