SI4564DY-T1-GE3
- Manufacturer's Part No.:SI4564DY-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET N/P-CH 40V 10A 8SOIC
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 40000
- Available: 142562
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.94700 | US $1.95 |
10+ | US $1.29800 | US $12.98 |
30+ | US $0.97350 | US $29.21 |
100+ | US $0.77880 | US $77.88 |
500+ | US $0.71390 | US $356.95 |
1000+ | US $0.64900 | US $649.00 |
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI4564DY-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Height1.75mm
- Weight506.605978mg
- FET TypeN and P-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2010
- Rise Time40ns
- Resistance21mOhm
- FET FeatureLogic Level Gate
- Nominal Vgs800 mV
- Part StatusActive
- Pbfree Codeyes
- Power - Max3.1W 3.2W
- SubcategoryOther Transistors
- REACH StatusREACH Affected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)15 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberSI4564
- Factory Lead Time14 Weeks
- Power Dissipation2W
- Terminal PositionDUAL
- Threshold Voltage800mV
- Number of Channels2
- Number of Elements2
- Turn On Delay Time42 ns
- Vgs(th) (Max) @ Id2V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time40 ns
- Max Power Dissipation3.2W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations8
- Rds On (Max) @ Id, Vgs17.5m Ω @ 8A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min40V
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)8A
- Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)10A
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)40V
- Input Capacitance (Ciss) (Max) @ Vds855pF @ 20V
- Current - Continuous Drain (Id) @ 25°C10A 9.2A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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