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SI4564DY-T1-GE3

  • In Stock: 40000
  • Available: 142562

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.94700US $1.95
10+US $1.29800US $12.98
30+US $0.97350US $29.21
100+US $0.77880US $77.88
500+US $0.71390US $356.95
1000+US $0.64900US $649.00

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI4564DY-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Height
    1.75mm
  • Weight
    506.605978mg
  • FET Type
    N and P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2010
  • Rise Time
    40ns
  • Resistance
    21mOhm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    800 mV
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    3.1W 3.2W
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Affected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Fall Time (Typ)
    15 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    SI4564
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    2W
  • Terminal Position
    DUAL
  • Threshold Voltage
    800mV
  • Number of Channels
    2
  • Number of Elements
    2
  • Turn On Delay Time
    42 ns
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    40 ns
  • Max Power Dissipation
    3.2W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    17.5m Ω @ 8A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    40V
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    8A
  • Gate Charge (Qg) (Max) @ Vgs
    31nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    10A
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    40V
  • Input Capacitance (Ciss) (Max) @ Vds
    855pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    10A 9.2A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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