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SI4622DY-T1-GE3

  • Available: 11443

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI4622DY-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    SkyFET®, TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Weight
    186.993455mg
  • FET Type
    2 N-Channel (Dual)
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2016
  • FET Feature
    Standard
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Power - Max
    3.3W 3.1W
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Fall Time (Typ)
    11 ns
  • Terminal Finish
    MATTE TIN
  • Base Part Number
    SI4622
  • Power Dissipation
    2.2W
  • Number of Channels
    2
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Radiation Hardening
    No
  • Max Power Dissipation
    3.1W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    16m Ω @ 9.6A, 10V
  • DS Breakdown Voltage-Min
    30V
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    8A
  • Gate Charge (Qg) (Max) @ Vgs
    60nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    8A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    30V
  • Drain-source On Resistance-Max
    0.016Ohm
  • Input Capacitance (Ciss) (Max) @ Vds
    2458pF @ 15V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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