SI4800BDY-T1-GE3

The SI4800BDY-T1-GE3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This component is designed for a variety of applications, including power management, switching, and amplification in electronic circuits.

Key Features:

1. Type: N-channel MOSFET
2. Package: The device is housed in a compact SO-8 (Small Outline 8-lead) package, which is suitable for surface mounting. This package design helps in saving board space and allows for efficient thermal management.
3. Voltage Rating: The SI4800BDY-T1-GE3 has a maximum drain-source voltage (V_DS) rating of 30V, making it suitable for low to medium voltage applications.
4. Current Rating: It can handle a continuous drain current (I_D) of up to 60A, which allows it to be used in high-current applications without overheating.
5. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 8.5 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved efficiency in switching applications.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 3V, which allows for easy drive with low-voltage control signals.
7. Switching Speed: The device is designed for fast switching, making it ideal for applications that require rapid on/off control, such as in power supplies and motor drivers.
8. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, which helps in maintaining operational stability and reliability under high load conditions.
9. Applications: Common applications include DC-DC converters, load switches, and power management circuits in consumer electronics, automotive systems, and industrial equipment.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): Typically around 45W, depending on the thermal management in the application.
• Body Diode Characteristics: The SI4800BDY-T1-GE3 features an integrated body diode, which provides additional functionality in applications requiring reverse current flow.

Environmental and Compliance:

• RoHS Compliant: The component is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring it is free from certain hazardous materials.
• Operating Temperature Range: The device can operate in a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.

Conclusion:

The SI4800BDY-T1-GE3 from Vishay is a versatile and efficient N-channel MOSFET that is well-suited for a range of electronic applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it an excellent choice for designers looking to optimize performance in power management and switching circuits.