SI4834BDY-T1-GE3
- Manufacturer's Part No.:SI4834BDY-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2N-CH 30V 5.7A 8-SOIC
- Datasheet:
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- Available: 4328
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI4834BDY-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width4mm
- Height1.55mm
- Length5mm
- Weight186.993455mg
- FET Type2 N-Channel (Dual)
- PackagingTape & Reel (TR)
- Published2012
- Rise Time10ns
- Rds On Max22 mΩ
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Power - Max1.1W
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins8
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)9 ns
- Base Part NumberSI4834
- Number of Channels2
- Turn On Delay Time9 ns
- Vgs(th) (Max) @ Id3V @ 250μA
- Turn-Off Delay Time19 ns
- Element ConfigurationDual
- Max Power Dissipation1.1W
- Operating Temperature-55°C~150°C TJ
- Rds On (Max) @ Id, Vgs22mOhm @ 7.5A, 10V
- Supplier Device Package8-SO
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Drain to Source Resistance22mOhm
- Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)5.7A
- Drain to Source Voltage (Vdss)30V
- Drain to Source Breakdown Voltage30V
- Current - Continuous Drain (Id) @ 25°C5.7A
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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