SI4914BDY-T1-E3
- Manufacturer's Part No.:SI4914BDY-T1-E3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:LITTLE FOOT®
- Description:MOSFET 2N-CH 30V 8.4A 8-SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 25981
- Available: 13600
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.84800 | US $1.85 |
10+ | US $1.23200 | US $12.32 |
30+ | US $0.92400 | US $27.72 |
100+ | US $0.73920 | US $73.92 |
500+ | US $0.67760 | US $338.80 |
1000+ | US $0.61600 | US $616.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI4914BDY-T1-E3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesLITTLE FOOT®
- ECCNEAR99
- MountSurface Mount
- Width4mm
- Height1.5mm
- Length5mm
- Weight506.605978mg
- FET Type2 N-Channel (Half Bridge)
- PackagingTape & Reel (TR)
- Published2009
- Rise Time9ns
- Rds On Max21 mΩ
- FET FeatureStandard
- Part StatusObsolete
- Power - Max2.7W 3.1W
- Mounting TypeSurface Mount
- Number of Pins8
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)9 ns
- Base Part NumberSI4914
- Factory Lead Time15 Weeks
- Number of Channels2
- Number of Elements2
- Turn On Delay Time10 ns
- Vgs(th) (Max) @ Id2.7V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time16 ns
- Max Power Dissipation3.1W
- Operating Temperature-55°C~150°C TJ
- Rds On (Max) @ Id, Vgs21mOhm @ 8A, 10V
- Supplier Device Package8-SO
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Drain to Source Resistance23mOhm
- Gate Charge (Qg) (Max) @ Vgs10.5nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)7.4A
- Drain to Source Voltage (Vdss)30V
- Drain to Source Breakdown Voltage30V
- Current - Continuous Drain (Id) @ 25°C8.4A 8A
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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