SI4936CDY-T1-E3
- Manufacturer's Part No.:SI4936CDY-T1-E3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2N-CH 30V 5.8A 8SO
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 12
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.76560 | US $0.77 |
10+ | US $0.51040 | US $5.10 |
30+ | US $0.38280 | US $11.48 |
100+ | US $0.30624 | US $30.62 |
500+ | US $0.28072 | US $140.36 |
1000+ | US $0.25520 | US $255.20 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI4936CDY-T1-E3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- FET Type2 N-Channel (Dual)
- PackagingTape & Reel (TR)
- Published2015
- Rds On Max40 mΩ
- FET FeatureLogic Level Gate
- Part StatusActive
- Power - Max2.3W
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins8
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Base Part NumberSI4936
- Factory Lead Time14 Weeks
- Input Capacitance325pF
- Vgs(th) (Max) @ Id3V @ 250μA
- Radiation HardeningNo
- Max Power Dissipation2.3W
- Operating Temperature-55°C~150°C TJ
- Rds On (Max) @ Id, Vgs40mOhm @ 5A, 10V
- Supplier Device Package8-SO
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)5.8A
- Drain to Source Voltage (Vdss)30V
- Input Capacitance (Ciss) (Max) @ Vds325pF @ 15V
- Current - Continuous Drain (Id) @ 25°C5.8A
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS non-compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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