SI4973DY-T1-GE3
- Manufacturer's Part No.:SI4973DY-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2P-CH 30V 5.8A 8SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 11787
Reference Price(In US Dollars)
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI4973DY-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- FET Type2 P-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2014
- Rise Time15ns
- Resistance23MOhm
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)90 ns
- Terminal FinishPURE MATTE TIN
- Base Part NumberSI4973
- Power Dissipation1.1W
- Number of Elements2
- Turn On Delay Time10 ns
- Vgs(th) (Max) @ Id3V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time115 ns
- Element ConfigurationDual
- Max Power Dissipation1.1W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs23m Ω @ 7.6A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
- Gate to Source Voltage (Vgs)25V
- Continuous Drain Current (ID)5.8A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)30V
- Drain to Source Breakdown Voltage30V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PDSO-G8
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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