SI5517DU-T1-GE3
- Manufacturer's Part No.:SI5517DU-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET N/P-CH 20V 6A CHIPFET
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 3000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.57080 | US $1.57 |
10+ | US $1.04720 | US $10.47 |
30+ | US $0.78540 | US $23.56 |
100+ | US $0.62832 | US $62.83 |
500+ | US $0.57596 | US $287.98 |
1000+ | US $0.52360 | US $523.60 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI5517DU-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width1.9mm
- Height750μm
- Length3mm
- FET TypeN and P-Channel
- PackagingTape & Reel (TR)
- Pin Count8
- Published2014
- Rise Time35ns
- FET FeatureLogic Level Gate
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- Mounting TypeSurface Mount
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / CasePowerPAK® ChipFET™ Dual
- Case ConnectionDRAIN
- Fall Time (Typ)55 ns
- Terminal FinishMATTE TIN
- Base Part NumberSI5517
- Factory Lead Time14 Weeks
- Power Dissipation2.3W
- Number of Elements2
- Turn On Delay Time8 ns
- Vgs(th) (Max) @ Id1V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time40 ns
- Max Power Dissipation8.3W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations6
- Rds On (Max) @ Id, Vgs39m Ω @ 4.4A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)6A
- Gate Charge (Qg) (Max) @ Vgs16nC @ 8V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)7.2A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.039Ohm
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds520pF @ 10V
- Current - Continuous Drain (Id) @ 25°C6A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-XDSO-C6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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