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SI5902DC-T1-E3

  • Available: 11479

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI5902DC-T1-E3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    1.7mm
  • Height
    1.1mm
  • Length
    3.1mm
  • FET Type
    2 N-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2009
  • Rise Time
    12ns
  • Resistance
    85mOhm
  • FET Feature
    Logic Level Gate
  • Part Status
    Obsolete
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    C BEND
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SMD, Flat Lead
  • Fall Time (Typ)
    12 ns
  • Terminal Finish
    MATTE TIN
  • Base Part Number
    SI5902
  • Power Dissipation
    1.1W
  • Threshold Voltage
    1V
  • Number of Elements
    2
  • Turn On Delay Time
    7 ns
  • Vgs(th) (Max) @ Id
    1V @ 250μA (Min)
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    12 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    1.1W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    85m Ω @ 2.9A, 10V
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    7.5nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    2.9A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    30V
  • Drain to Source Breakdown Voltage
    30V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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