SI5915BDC-T1-E3
- Manufacturer's Part No.:SI5915BDC-T1-E3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2P-CH 8V 4A 1206-8
- Datasheet:
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- Available: 12207
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI5915BDC-T1-E3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- FET Type2 P-Channel (Dual)
- PackagingTape & Reel (TR)
- Pin Count8
- Published2010
- Rise Time12ns
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Power - Max3.1W
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SMD, Flat Lead
- Case ConnectionDRAIN
- Fall Time (Typ)12 ns
- Terminal FinishMATTE TIN
- Base Part NumberSI5915
- Power Dissipation1.7W
- Number of Elements2
- Vgs(th) (Max) @ Id1V @ 250μA
- Turn-Off Delay Time20 ns
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation3.1W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs70m Ω @ 3.3A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)4A
- Gate Charge (Qg) (Max) @ Vgs14nC @ 8V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)4A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.07Ohm
- Pulsed Drain Current-Max (IDM)10A
- Drain to Source Breakdown Voltage8V
- Input Capacitance (Ciss) (Max) @ Vds420pF @ 4V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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