SI5933DC-T1-E3
- Manufacturer's Part No.:SI5933DC-T1-E3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2P-CH 20V 2.7A 1206-8
- Datasheet:
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- Available: 10610
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI5933DC-T1-E3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width1.65mm
- Height1.1mm
- Length3.05mm
- Weight84.99187mg
- FET Type2 P-Channel (Dual)
- PackagingTape & Reel (TR)
- Published2007
- Rise Time30ns
- Rds On Max110 mΩ
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Power - Max1.1W
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins8
- Package / Case8-SMD, Flat Lead
- Fall Time (Typ)30 ns
- Base Part NumberSI5933
- Power Dissipation1.1W
- Number of Channels2
- Number of Elements2
- Turn On Delay Time30 ns
- Vgs(th) (Max) @ Id1V @ 250μA
- Turn-Off Delay Time27 ns
- Element ConfigurationDual
- Max Power Dissipation1.1W
- Operating Temperature-55°C~150°C TJ
- Rds On (Max) @ Id, Vgs110mOhm @ 2.7A, 4.5V
- Supplier Device Package1206-8 ChipFET™
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Drain to Source Resistance110mOhm
- Gate Charge (Qg) (Max) @ Vgs7.7nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)-2.7A
- Drain to Source Voltage (Vdss)20V
- Drain to Source Breakdown Voltage-20V
- Current - Continuous Drain (Id) @ 25°C2.7A
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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