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SI5935CDC-T1-E3

  • Available: 431769

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.61380US $0.61
10+US $0.40920US $4.09
30+US $0.30690US $9.21
100+US $0.24552US $24.55
500+US $0.22506US $112.53
1000+US $0.20460US $204.60

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI5935CDC-T1-E3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    1.65mm
  • Height
    1.1mm
  • Length
    3.05mm
  • Weight
    84.99187mg
  • FET Type
    2 P-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2012
  • Rise Time
    32ns
  • FET Feature
    Standard
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    C BEND
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SMD, Flat Lead
  • Fall Time (Typ)
    32 ns
  • Terminal Finish
    PURE MATTE TIN
  • Base Part Number
    SI5935
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    1.3W
  • Number of Elements
    2
  • Turn On Delay Time
    10 ns
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    25 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    3.1W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 3.1A, 4.5V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    4A
  • Gate Charge (Qg) (Max) @ Vgs
    11nC @ 5V
  • Gate to Source Voltage (Vgs)
    8V
  • Continuous Drain Current (ID)
    3.1A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    20V
  • Drain-source On Resistance-Max
    0.1Ohm
  • Drain to Source Breakdown Voltage
    -20V
  • Input Capacitance (Ciss) (Max) @ Vds
    455pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    4A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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