SI5935CDC-T1-E3
- Manufacturer's Part No.:SI5935CDC-T1-E3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2P-CH 20V 4A 1206-8
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 431769
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.61380 | US $0.61 |
10+ | US $0.40920 | US $4.09 |
30+ | US $0.30690 | US $9.21 |
100+ | US $0.24552 | US $24.55 |
500+ | US $0.22506 | US $112.53 |
1000+ | US $0.20460 | US $204.60 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI5935CDC-T1-E3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width1.65mm
- Height1.1mm
- Length3.05mm
- Weight84.99187mg
- FET Type2 P-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2012
- Rise Time32ns
- FET FeatureStandard
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SMD, Flat Lead
- Fall Time (Typ)32 ns
- Terminal FinishPURE MATTE TIN
- Base Part NumberSI5935
- Factory Lead Time14 Weeks
- Power Dissipation1.3W
- Number of Elements2
- Turn On Delay Time10 ns
- Vgs(th) (Max) @ Id1V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time25 ns
- Element ConfigurationDual
- Max Power Dissipation3.1W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs100m Ω @ 3.1A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)4A
- Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)3.1A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)20V
- Drain-source On Resistance-Max0.1Ohm
- Drain to Source Breakdown Voltage-20V
- Input Capacitance (Ciss) (Max) @ Vds455pF @ 10V
- Current - Continuous Drain (Id) @ 25°C4A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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