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SI5975DC-T1-E3

  • Available: 11107

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI5975DC-T1-E3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    1.65mm
  • Height
    1.1mm
  • Length
    3.05mm
  • Weight
    84.99187mg
  • FET Type
    2 P-Channel (Dual)
  • Packaging
    Tape & Reel (TR)
  • Published
    2016
  • Rise Time
    20ns
  • Rds On Max
    86 mΩ
  • FET Feature
    Logic Level Gate
  • Part Status
    Obsolete
  • Power - Max
    1.1W
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Number of Pins
    8
  • Package / Case
    8-SMD, Flat Lead
  • Fall Time (Typ)
    20 ns
  • Power Dissipation
    1.1W
  • Number of Channels
    2
  • Turn On Delay Time
    10 ns
  • Vgs(th) (Max) @ Id
    450mV @ 1mA (Min)
  • Turn-Off Delay Time
    31 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    1.1W
  • Operating Temperature
    -55°C~150°C TJ
  • Rds On (Max) @ Id, Vgs
    86mOhm @ 3.1A, 4.5V
  • Supplier Device Package
    1206-8 ChipFET™
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Drain to Source Resistance
    86mOhm
  • Gate Charge (Qg) (Max) @ Vgs
    9nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    8V
  • Continuous Drain Current (ID)
    3.1A
  • Drain to Source Voltage (Vdss)
    12V
  • Drain to Source Breakdown Voltage
    -12V
  • Current - Continuous Drain (Id) @ 25°C
    3.1A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

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