SI5999EDU-T1-GE3
- Manufacturer's Part No.:SI5999EDU-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2P-CH 20V 6A POWERPAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 12429
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.71775 | US $0.72 |
10+ | US $0.47850 | US $4.79 |
30+ | US $0.35887 | US $10.77 |
100+ | US $0.28710 | US $28.71 |
500+ | US $0.26317 | US $131.59 |
1000+ | US $0.23925 | US $239.25 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI5999EDU-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- FET Type2 P-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2016
- Rise Time21ns
- Resistance59mOhm
- FET FeatureLogic Level Gate
- Nominal Vgs-600 mV
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryOther Transistors
- Mounting TypeSurface Mount
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / CasePowerPAK® ChipFET™ Dual
- Case ConnectionDRAIN
- Fall Time (Typ)13 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberSI5999
- Power Dissipation2.3W
- Number of Channels2
- Number of Elements2
- Turn On Delay Time17 ns
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Turn-Off Delay Time26 ns
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation10.4W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations6
- Rds On (Max) @ Id, Vgs59m Ω @ 3.5A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)6A
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)5A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)20V
- Drain to Source Breakdown Voltage-20V
- Input Capacitance (Ciss) (Max) @ Vds496pF @ 10V
- Current - Continuous Drain (Id) @ 25°C6A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PDSO-C6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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