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SI5999EDU-T1-GE3

  • Available: 12429

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.71775US $0.72
10+US $0.47850US $4.79
30+US $0.35887US $10.77
100+US $0.28710US $28.71
500+US $0.26317US $131.59
1000+US $0.23925US $239.25

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI5999EDU-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    2 P-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2016
  • Rise Time
    21ns
  • Resistance
    59mOhm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    -600 mV
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • Mounting Type
    Surface Mount
  • Terminal Form
    C BEND
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    PowerPAK® ChipFET™ Dual
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    13 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    SI5999
  • Power Dissipation
    2.3W
  • Number of Channels
    2
  • Number of Elements
    2
  • Turn On Delay Time
    17 ns
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Turn-Off Delay Time
    26 ns
  • Qualification Status
    Not Qualified
  • Element Configuration
    Dual
  • Max Power Dissipation
    10.4W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    59m Ω @ 3.5A, 4.5V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    6A
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Gate to Source Voltage (Vgs)
    12V
  • Continuous Drain Current (ID)
    5A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    20V
  • Drain to Source Breakdown Voltage
    -20V
  • Input Capacitance (Ciss) (Max) @ Vds
    496pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    6A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-C6
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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