SI6544BDQ-T1-GE3
- Manufacturer's Part No.:SI6544BDQ-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET N/P-CH 30V 3.7A 8-TSSOP
- Datasheet:
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- Available: 11210
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI6544BDQ-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width4.4958mm
- Height1.0414mm
- Length3.0988mm
- FET TypeN and P-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2008
- Rise Time14ns
- Resistance32mOhm
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Fall Time (Typ)14 ns
- Terminal FinishPURE MATTE TIN
- Base Part NumberSI6544
- Power Dissipation830mW
- Number of Elements2
- Vgs(th) (Max) @ Id3V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time40 ns
- Element ConfigurationDual
- Max Power Dissipation830mW
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations8
- Rds On (Max) @ Id, Vgs43m Ω @ 3.8A, 10V
- DS Breakdown Voltage-Min30V
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)3.7A
- Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)2.7A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)30V
- Current - Continuous Drain (Id) @ 25°C3.7A 3.8A
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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