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SI6562CDQ-T1-GE3

  • In Stock: 150000
  • Available: 193304

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $24.45800US $24.46
10+US $18.34350US $183.44
30+US $15.89770US $476.93
100+US $14.06335US $1406.34
500+US $13.20732US $6603.66
1000+US $12.22900US $12229.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI6562CDQ-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    4.4mm
  • Height
    1.2mm
  • Length
    3mm
  • Weight
    157.991892mg
  • FET Type
    N and P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2016
  • Rise Time
    25ns
  • FET Feature
    Logic Level Gate
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    1.6W 1.7W
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-TSSOP (0.173, 4.40mm Width)
  • Fall Time (Typ)
    25 ns
  • Terminal Finish
    MATTE TIN
  • Base Part Number
    SI6562
  • Factory Lead Time
    14 Weeks
  • Terminal Position
    DUAL
  • Threshold Voltage
    600mV
  • Number of Channels
    2
  • Number of Elements
    2
  • Turn On Delay Time
    30 ns
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    45 ns
  • Max Power Dissipation
    1.7W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    22m Ω @ 5.7A, 4.5V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    6.7A
  • Gate Charge (Qg) (Max) @ Vgs
    23nC @ 10V
  • Gate to Source Voltage (Vgs)
    12V
  • Continuous Drain Current (ID)
    6.1A
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Breakdown Voltage
    20V
  • Input Capacitance (Ciss) (Max) @ Vds
    850pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    6.7A 6.1A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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