SI6925ADQ-T1-GE3
- Manufacturer's Part No.:SI6925ADQ-T1-GE3
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- Series:-
- Description:MOSFET 2N-CH 20V 3.3A 8-TSSOP
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- Available: 4406
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI6925ADQ-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- FET Type2 N-Channel (Dual)
- PackagingTape & Reel (TR)
- Pin Count8
- Published2016
- Rise Time50ns
- FET FeatureLogic Level Gate
- Nominal Vgs1.8 V
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Powers
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Fall Time (Typ)50 ns
- Terminal FinishMATTE TIN
- Base Part NumberSI6925
- Power Dissipation800mW
- Number of Elements2
- Turn On Delay Time40 ns
- Vgs(th) (Max) @ Id1.8V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time20 ns
- Element ConfigurationDual
- Max Power Dissipation800mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs45m Ω @ 3.9A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)3.3A
- Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)3.9A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.045Ohm
- Drain to Source Breakdown Voltage20V
- Current - Continuous Drain (Id) @ 25°C3.3A
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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