SI6968BEDQ-T1-E3
- Manufacturer's Part No.:SI6968BEDQ-T1-E3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2N-CH 20V 5.2A 8TSSOP
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 50000
- Available: 142562
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $5.84000 | US $5.84 |
10+ | US $5.25600 | US $52.56 |
30+ | US $4.08800 | US $122.64 |
100+ | US $3.35800 | US $335.80 |
500+ | US $3.21200 | US $1606.00 |
1000+ | US $2.92000 | US $2920.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI6968BEDQ-T1-E3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width4.4mm
- Height1mm
- Length3mm
- Weight157.991892mg
- FET Type2 N-Channel (Dual) Common Drain
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2008
- Rise Time330ns
- Resistance22mOhm
- FET FeatureLogic Level Gate
- Nominal Vgs600 mV
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Fall Time (Typ)510 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberSI6968
- Factory Lead Time14 Weeks
- Power Dissipation1W
- Threshold Voltage600mV
- Number of Channels2
- Number of Elements2
- Turn On Delay Time245 ns
- Vgs(th) (Max) @ Id1.6V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time860 ns
- Element ConfigurationDual
- Max Power Dissipation1W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs22m Ω @ 6.5A, 4.5V
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)5.2A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)20V
- Drain to Source Breakdown Voltage20V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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