SI6969DQ-T1-E3
- Manufacturer's Part No.:SI6969DQ-T1-E3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2P-CH 12V 8TSSOP
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- Available: 11335
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI6969DQ-T1-E3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width4.4mm
- Height1mm
- Length3mm
- Weight157.991892mg
- FET Type2 P-Channel (Dual)
- PackagingTape & Reel (TR)
- Pin Count8
- Published2016
- Rise Time35ns
- FET FeatureLogic Level Gate
- Part StatusObsolete
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Fall Time (Typ)35 ns
- Terminal FinishMATTE TIN
- Base Part NumberSI6969
- Power Dissipation1.1W
- Number of Channels2
- Number of Elements2
- Turn On Delay Time25 ns
- Vgs(th) (Max) @ Id450mV @ 250μA (Min)
- Turn-Off Delay Time80 ns
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation1.1W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs34m Ω @ 4.6A, 4.5V
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs40nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)4.6A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)12V
- Drain-source On Resistance-Max0.034Ohm
- Pulsed Drain Current-Max (IDM)30A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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