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SI6993DQ-T1-GE3

  • Available: 14006

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI6993DQ-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    2 P-Channel (Dual)
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2008
  • Rise Time
    14ns
  • FET Feature
    Logic Level Gate
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-TSSOP (0.173, 4.40mm Width)
  • Fall Time (Typ)
    14 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    SI6993
  • Power Dissipation
    830mW
  • Number of Elements
    2
  • Turn On Delay Time
    13 ns
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    52 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    830mW
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    31m Ω @ 4.7A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    30V
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    3.6A
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    -4.7A
  • Drain to Source Voltage (Vdss)
    30V
  • Drain-source On Resistance-Max
    0.031Ohm
  • Current - Continuous Drain (Id) @ 25°C
    3.6A

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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