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SI7224DN-T1-GE3

  • Available: 11195

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.57080US $1.57
10+US $1.04720US $10.47
30+US $0.78540US $23.56
100+US $0.62832US $62.83
500+US $0.57596US $287.98
1000+US $0.52360US $523.60

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI7224DN-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.3mm
  • Height
    1.04mm
  • Length
    3.3mm
  • FET Type
    2 N-Channel (Dual)
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2015
  • Rise Time
    10ns
  • FET Feature
    Logic Level Gate
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Power - Max
    17.8W 23W
  • Subcategory
    FET General Purpose Power
  • Mounting Type
    Surface Mount
  • Terminal Form
    C BEND
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    PowerPAK® 1212-8 Dual
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    10 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    SI7224
  • Factory Lead Time
    15 Weeks
  • Number of Channels
    2
  • Number of Elements
    2
  • Turn On Delay Time
    20 ns
  • Vgs(th) (Max) @ Id
    2.2V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    15 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    23W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    35m Ω @ 6.5A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    6A
  • Gate Charge (Qg) (Max) @ Vgs
    14.5nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    6A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    30V
  • Drain-source On Resistance-Max
    0.035Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    570pF @ 15V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    S-XDSO-C6
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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