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SI7431DP-T1-GE3

  • In Stock: 90000
  • Available: 8000
  • Updated: 1 HRS ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.08080US $2.08
10+US $1.87272US $18.73
30+US $1.45656US $43.70
100+US $1.19646US $119.65
500+US $1.14444US $572.22
1000+US $1.04040US $1040.40

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI7431DP-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    5.89mm
  • Height
    1.04mm
  • Length
    4.9mm
  • Weight
    506.605978mg
  • FET Type
    P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2011
  • Rise Time
    49ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    -4 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    C BEND
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    PowerPAK® SO-8
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    49 ns
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    1.9W
  • Terminal Position
    DUAL
  • Threshold Voltage
    -4V
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    23 ns
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    110 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    1.9W Ta
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    174m Ω @ 3.8A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    135nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    45 mJ
  • Continuous Drain Current (ID)
    -2.2A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    200V
  • Pulsed Drain Current-Max (IDM)
    30A
  • Drain to Source Breakdown Voltage
    -200V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Current - Continuous Drain (Id) @ 25°C
    2.2A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-XDSO-C5
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

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  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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