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SI7463DP-T1-E3

  • In Stock: 3468
  • Available: 67217

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.55420US $2.55
10+US $2.29878US $22.99
30+US $1.78794US $53.64
100+US $1.46866US $146.87
500+US $1.40481US $702.41
1000+US $1.27710US $1277.10

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI7463DP-T1-E3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    5.89mm
  • Height
    1.17mm
  • Length
    4.9mm
  • Weight
    506.605978mg
  • FET Type
    P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2011
  • Rise Time
    25ns
  • Vgs (Max)
    ±20V
  • Resistance
    9.2mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    -3 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    C BEND
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    PowerPAK® SO-8
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    25 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    1.9W
  • Terminal Position
    DUAL
  • Threshold Voltage
    -3V
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    20 ns
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Dual Supply Voltage
    40V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    200 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    1.9W Ta
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    9.2m Ω @ 18.6A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    140nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    -18.6A
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    260
  • Pulsed Drain Current-Max (IDM)
    60A
  • Manufacturer Package Identifier
    S17-0173-Single
  • Drain to Source Breakdown Voltage
    -40V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    11A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-XDSO-C5
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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