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SI7540DP-T1-E3

  • In Stock: 1000
  • Available: 11108

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $7.50000US $7.50
10+US $6.75000US $67.50
30+US $5.25000US $157.50
100+US $4.31250US $431.25
500+US $4.12500US $2062.50
1000+US $3.75000US $3750.00

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI7540DP-T1-E3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    5.89mm
  • Height
    1.04mm
  • Length
    4.9mm
  • Weight
    506.605978mg
  • FET Type
    N and P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2014
  • Rise Time
    42ns
  • Resistance
    17mOhm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    1.5 V
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Power - Max
    1.4W
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    C BEND
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    PowerPAK® SO-8 Dual
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    42 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    SI7540
  • Power Dissipation
    3.5W
  • Threshold Voltage
    1.5V
  • Number of Channels
    2
  • Number of Elements
    1
  • Turn On Delay Time
    35 ns
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    54 ns
  • Element Configuration
    Single
  • Max Power Dissipation
    3.5W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    17m Ω @ 11.8A, 4.5V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    7.6A
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    8V
  • Continuous Drain Current (ID)
    11.8A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Breakdown Voltage
    12V
  • Current - Continuous Drain (Id) @ 25°C
    7.6A 5.7A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-XDSO-C6
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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