SI7540DP-T1-E3
- Manufacturer's Part No.:SI7540DP-T1-E3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET N/P-CH 12V 7.6A PPAK SO-8
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 1000
- Available: 11108
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $7.50000 | US $7.50 |
10+ | US $6.75000 | US $67.50 |
30+ | US $5.25000 | US $157.50 |
100+ | US $4.31250 | US $431.25 |
500+ | US $4.12500 | US $2062.50 |
1000+ | US $3.75000 | US $3750.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI7540DP-T1-E3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width5.89mm
- Height1.04mm
- Length4.9mm
- Weight506.605978mg
- FET TypeN and P-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2014
- Rise Time42ns
- Resistance17mOhm
- FET FeatureLogic Level Gate
- Nominal Vgs1.5 V
- Part StatusObsolete
- Pbfree Codeyes
- Power - Max1.4W
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / CasePowerPAK® SO-8 Dual
- Case ConnectionDRAIN
- Fall Time (Typ)42 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberSI7540
- Power Dissipation3.5W
- Threshold Voltage1.5V
- Number of Channels2
- Number of Elements1
- Turn On Delay Time35 ns
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time54 ns
- Element ConfigurationSingle
- Max Power Dissipation3.5W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations6
- Rds On (Max) @ Id, Vgs17m Ω @ 11.8A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)7.6A
- Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)11.8A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage12V
- Current - Continuous Drain (Id) @ 25°C7.6A 5.7A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-XDSO-C6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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