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SI7615ADN-T1-GE3

  • In Stock: 48000
  • Available: 290392
  • Updated: 9 HRS ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.56335US $0.56
10+US $0.37556US $3.76
30+US $0.28167US $8.45
100+US $0.22534US $22.53
500+US $0.20656US $103.28
1000+US $0.18778US $187.78

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI7615ADN-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.4mm
  • Height
    1.12mm
  • Length
    3.4mm
  • FET Type
    P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • Rise Time
    40ns
  • Vgs (Max)
    ±12V
  • Resistance
    4.4mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • REACH Status
    REACH Affected
  • Mounting Type
    Surface Mount
  • Terminal Form
    C BEND
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    PowerPAK® 1212-8
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    26 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    3.7W
  • Terminal Position
    DUAL
  • Threshold Voltage
    -400mV
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    13 ns
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    85 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    3.7W Ta 52W Tc
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    4.4m Ω @ 20A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    35A
  • Gate Charge (Qg) (Max) @ Vgs
    183nC @ 10V
  • Gate to Source Voltage (Vgs)
    12V
  • Avalanche Energy Rating (Eas)
    20 mJ
  • Continuous Drain Current (ID)
    -22.1A
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    20V
  • Drain to Source Breakdown Voltage
    -20V
  • Input Capacitance (Ciss) (Max) @ Vds
    5590pF @ 10V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    35A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    S-PDSO-C5
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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