SI7842DP-T1-GE3
- Manufacturer's Part No.:SI7842DP-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:LITTLE FOOT®
- Description:MOSFET 2N-CH 30V 6.3A PPAK SO-8
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 240000
- Available: 12853
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.37000 | US $2.37 |
10+ | US $1.58000 | US $15.80 |
30+ | US $1.18500 | US $35.55 |
100+ | US $0.94800 | US $94.80 |
500+ | US $0.86900 | US $434.50 |
1000+ | US $0.79000 | US $790.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI7842DP-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesLITTLE FOOT®
- ECCNEAR99
- MountSurface Mount
- FET Type2 N-Channel (Dual)
- PackagingTape & Reel (TR)
- Pin Count8
- Published2016
- Rise Time10ns
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / CasePowerPAK® SO-8 Dual
- Case ConnectionDRAIN
- Fall Time (Typ)10 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberSI7842
- Power Dissipation1.4W
- Number of Elements2
- Turn On Delay Time8 ns
- Vgs(th) (Max) @ Id2.4V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time21 ns
- Max Power Dissipation1.4W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs22m Ω @ 7.5A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)6.3A
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)10A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.022Ohm
- Pulsed Drain Current-Max (IDM)30A
- Drain to Source Breakdown Voltage30V
- Current - Continuous Drain (Id) @ 25°C6.3A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-XDSO-C6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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