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SI7852ADP-T1-GE3

  • In Stock: 300
  • Available: 98519
  • Updated: 1 HRS ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.34600US $2.35
10+US $2.11140US $21.11
30+US $1.64220US $49.27
100+US $1.34895US $134.90
500+US $1.29030US $645.15
1000+US $1.17300US $1173.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI7852ADP-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    5.89mm
  • Height
    1.12mm
  • Length
    4.9mm
  • Weight
    506.605978mg
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2012
  • Rise Time
    9ns
  • Vgs (Max)
    ±20V
  • Resistance
    17MOhm
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH info available upon request
  • Mounting Type
    Surface Mount
  • Terminal Form
    C BEND
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    PowerPAK® SO-8
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    9 ns
  • Terminal Finish
    MATTE TIN
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    5W
  • Terminal Position
    DUAL
  • Threshold Voltage
    4.5V
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    16 ns
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    26 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    5W Ta 62.5W Tc
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    17m Ω @ 10A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    45nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    45 mJ
  • Continuous Drain Current (ID)
    30A
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    260
  • Pulsed Drain Current-Max (IDM)
    60A
  • Manufacturer Package Identifier
    S17-0173_SINGLE
  • Drain to Source Breakdown Voltage
    80V
  • Input Capacitance (Ciss) (Max) @ Vds
    1825pF @ 40V
  • Drive Voltage (Max Rds On,Min Rds On)
    8V 10V
  • Current - Continuous Drain (Id) @ 25°C
    30A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-XDSO-C5
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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