SI7852ADP-T1-GE3
- Manufacturer's Part No.:SI7852ADP-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET N-CH 80V 30A PPAK SO-8
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 300
- Available: 98519
- Updated: 1 HRS ago
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.34600 | US $2.35 |
10+ | US $2.11140 | US $21.11 |
30+ | US $1.64220 | US $49.27 |
100+ | US $1.34895 | US $134.90 |
500+ | US $1.29030 | US $645.15 |
1000+ | US $1.17300 | US $1173.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI7852ADP-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width5.89mm
- Height1.12mm
- Length4.9mm
- Weight506.605978mg
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2012
- Rise Time9ns
- Vgs (Max)±20V
- Resistance17MOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH info available upon request
- Mounting TypeSurface Mount
- Terminal FormC BEND
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / CasePowerPAK® SO-8
- Case ConnectionDRAIN
- Fall Time (Typ)9 ns
- Terminal FinishMATTE TIN
- Factory Lead Time14 Weeks
- Power Dissipation5W
- Terminal PositionDUAL
- Threshold Voltage4.5V
- Number of Channels1
- Number of Elements1
- Turn On Delay Time16 ns
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time26 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max5W Ta 62.5W Tc
- Number of Terminations5
- Rds On (Max) @ Id, Vgs17m Ω @ 10A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)45 mJ
- Continuous Drain Current (ID)30A
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)60A
- Manufacturer Package IdentifierS17-0173_SINGLE
- Drain to Source Breakdown Voltage80V
- Input Capacitance (Ciss) (Max) @ Vds1825pF @ 40V
- Drive Voltage (Max Rds On,Min Rds On)8V 10V
- Current - Continuous Drain (Id) @ 25°C30A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-XDSO-C5
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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