SI7858BDP-T1-GE3

The SI7858BDP-T1-GE3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This device is designed for a variety of applications, including power management, DC-DC converters, and load switching, where efficiency and thermal performance are critical.

Key Features:

1. Type: N-channel MOSFET
2. Package: The device comes in a compact DPAK (TO-252) package, which is suitable for surface mounting. This package type allows for efficient heat dissipation and is ideal for applications where space is limited.
3. Voltage Rating: The SI7858BDP-T1-GE3 has a maximum drain-source voltage (V_DS) rating of 30V, making it suitable for low-voltage applications.
4. Current Rating: It can handle a continuous drain current (I_D) of up to 60A, which provides flexibility in various power applications.
5. R_DS(on): The on-resistance (R_DS(on)) is exceptionally low, typically around 8.5 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced conduction losses and improved efficiency.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 2.5V, allowing for easy drive with standard logic levels.
7. Thermal Resistance: The device features a low thermal resistance, which enhances its ability to dissipate heat during operation, thus improving reliability and performance.
8. Fast Switching Speed: The SI7858BDP-T1-GE3 is designed for fast switching applications, making it suitable for high-frequency operation in power converters and other switching applications.
9. Applications: Common applications include synchronous rectification, power management in computing and telecommunications, and automotive applications.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Pulsed Drain Current (I_D, pulsed): 100A
• Body Diode Characteristics: The device includes an intrinsic body diode, which provides additional functionality in applications requiring reverse current flow.

Reliability and Compliance:

The SI7858BDP-T1-GE3 is designed to meet stringent reliability standards and is compliant with RoHS (Restriction of Hazardous Substances) regulations, making it an environmentally friendly choice for modern electronic designs.

Conclusion:

Overall, the SI7858BDP-T1-GE3 from Vishay is a robust and efficient N-channel MOSFET that offers excellent performance for a wide range of applications. Its combination of low on-resistance, high current handling capability, and fast switching speeds makes it a preferred choice for engineers looking to optimize power efficiency in their designs.