SI7904BDN-T1-GE3
- Manufacturer's Part No.:SI7904BDN-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2N-CH 20V 6A PPAK 1212-8
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 40000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.50000 | US $1.50 |
10+ | US $1.00000 | US $10.00 |
30+ | US $0.75000 | US $22.50 |
100+ | US $0.60000 | US $60.00 |
500+ | US $0.55000 | US $275.00 |
1000+ | US $0.50000 | US $500.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI7904BDN-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width3.05mm
- Height1.04mm
- Length3.05mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2014
- Rise Time15ns
- Resistance30MOhm
- FET FeatureLogic Level Gate
- Part StatusActive
- Pbfree Codeyes
- Power - Max17.8W
- SubcategoryFET General Purpose Powers
- REACH StatusREACH info available upon request
- Mounting TypeSurface Mount
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / CasePowerPAK® 1212-8 Dual
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)5 ns
- Base Part NumberSI7904
- Factory Lead Time14 Weeks
- Power Dissipation2.5W
- Threshold Voltage1V
- Number of Channels2
- Number of Elements2
- Turn On Delay Time5 ns
- Vgs(th) (Max) @ Id1V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time25 ns
- Element ConfigurationDual
- Max Power Dissipation2.5W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs30m Ω @ 7.1A, 4.5V
- Transistor ApplicationAMPLIFIER
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)6A
- Gate Charge (Qg) (Max) @ Vgs24nC @ 8V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)6A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)20V
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds860pF @ 10V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- JESD-30 CodeS-XDSO-C6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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