SI7940DP-T1-E3
- Manufacturer's Part No.:SI7940DP-T1-E3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2N-CH 12V 7.6A PPAK SO-8
- Datasheet:
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- Available: 5484
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI7940DP-T1-E3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2016
- Rise Time50ns
- Resistance17mOhm
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / CasePowerPAK® SO-8 Dual
- Case ConnectionDRAIN
- Fall Time (Typ)50 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberSI7940
- Power Dissipation1.4W
- Number of Elements2
- Turn On Delay Time30 ns
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time60 ns
- Element ConfigurationDual
- Max Power Dissipation1.4W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs17m Ω @ 11.8A, 4.5V
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)7.6A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)12V
- Drain to Source Breakdown Voltage12V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-XDSO-C6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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