SI7942DP-T1-GE3
- Manufacturer's Part No.:SI7942DP-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2N-CH 100V 3.8A PPAK SO-8
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- Available: 68346
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $6.36600 | US $6.37 |
10+ | US $5.72940 | US $57.29 |
30+ | US $4.45620 | US $133.69 |
100+ | US $3.66045 | US $366.05 |
500+ | US $3.50130 | US $1750.65 |
1000+ | US $3.18300 | US $3183.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI7942DP-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width5.89mm
- Height1.04mm
- Length4.9mm
- Weight506.605978mg
- FET Type2 N-Channel (Dual)
- PackagingTape & Reel (TR)
- Pin Count8
- Published2015
- Rise Time15ns
- FET FeatureLogic Level Gate
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Powers
- REACH StatusREACH info available upon request
- Mounting TypeSurface Mount
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / CasePowerPAK® SO-8 Dual
- Case ConnectionDRAIN
- Fall Time (Typ)15 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberSI7942
- Factory Lead Time14 Weeks
- Power Dissipation1.4W
- Number of Elements2
- Turn On Delay Time15 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time35 ns
- Element ConfigurationDual
- Max Power Dissipation1.4W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs49m Ω @ 5.9A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min100V
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)3.8A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)100V
- Drain-source On Resistance-Max0.049Ohm
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-XDSO-C6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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