Image is for your reference only, please check specifications for details
iconCompare
icon

SI7960DP-T1-GE3

  • Available: 12869

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.94000US $2.94
10+US $2.64600US $26.46
30+US $2.05800US $61.74
100+US $1.69050US $169.05
500+US $1.61700US $808.50
1000+US $1.47000US $1470.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI7960DP-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    5.89mm
  • Height
    1.04mm
  • Length
    4.9mm
  • Weight
    506.605978mg
  • FET Type
    2 N-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2015
  • Rise Time
    12ns
  • Resistance
    21mOhm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    3 V
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Powers
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    C BEND
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    PowerPAK® SO-8 Dual
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    12 ns
  • Terminal Finish
    PURE MATTE TIN
  • Base Part Number
    SI7960
  • Power Dissipation
    1.4W
  • Number of Channels
    2
  • Number of Elements
    2
  • Turn On Delay Time
    12 ns
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    60 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    1.4W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    21m Ω @ 9.7A, 10V
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    75nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    9.7A
  • Peak Reflow Temperature (Cel)
    260
  • Pulsed Drain Current-Max (IDM)
    40A
  • Drain to Source Breakdown Voltage
    60V
  • Current - Continuous Drain (Id) @ 25°C
    6.2A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-XDSO-C6
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

  • Professional Platform

  • Full-speed Delivery

  • Wide Variety of Products

  • 365 Days of Quality Assurance