SI7960DP-T1-GE3
- Manufacturer's Part No.:SI7960DP-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2N-CH 60V 6.2A PPAK SO-8
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 12869
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.94000 | US $2.94 |
10+ | US $2.64600 | US $26.46 |
30+ | US $2.05800 | US $61.74 |
100+ | US $1.69050 | US $169.05 |
500+ | US $1.61700 | US $808.50 |
1000+ | US $1.47000 | US $1470.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI7960DP-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width5.89mm
- Height1.04mm
- Length4.9mm
- Weight506.605978mg
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2015
- Rise Time12ns
- Resistance21mOhm
- FET FeatureLogic Level Gate
- Nominal Vgs3 V
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Powers
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / CasePowerPAK® SO-8 Dual
- Case ConnectionDRAIN
- Fall Time (Typ)12 ns
- Terminal FinishPURE MATTE TIN
- Base Part NumberSI7960
- Power Dissipation1.4W
- Number of Channels2
- Number of Elements2
- Turn On Delay Time12 ns
- Vgs(th) (Max) @ Id3V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time60 ns
- Element ConfigurationDual
- Max Power Dissipation1.4W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs21m Ω @ 9.7A, 10V
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs75nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)9.7A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)40A
- Drain to Source Breakdown Voltage60V
- Current - Continuous Drain (Id) @ 25°C6.2A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-XDSO-C6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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