SI7997DP-T1-GE3
- Manufacturer's Part No.:SI7997DP-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2P-CH 30V 60A PPAK SO-8
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 52300
- Available: 83104
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.20000 | US $2.20 |
10+ | US $1.98000 | US $19.80 |
30+ | US $1.54000 | US $46.20 |
100+ | US $1.26500 | US $126.50 |
500+ | US $1.21000 | US $605.00 |
1000+ | US $1.10000 | US $1100.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI7997DP-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Height1.12mm
- Weight506.605978mg
- FET Type2 P-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2015
- Resistance5.5mOhm
- FET FeatureStandard
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Affected
- Mounting TypeSurface Mount
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / CasePowerPAK® SO-8 Dual
- Case ConnectionDRAIN
- Fall Time (Typ)40 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberSI7997
- Factory Lead Time14 Weeks
- Power Dissipation3.5W
- Threshold Voltage-2.2V
- Number of Elements2
- Turn On Delay Time15 ns
- Vgs(th) (Max) @ Id2.2V @ 250μA
- Turn-Off Delay Time115 ns
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation46W
- Operating Temperature-55°C~150°C TJ
- Reach Compliance Codeunknown
- Number of Terminations5
- Rds On (Max) @ Id, Vgs5.5m Ω @ 20A, 10V
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)60A
- Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)45 mJ
- Continuous Drain Current (ID)-20.8A
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)30V
- Pulsed Drain Current-Max (IDM)100A
- Drain to Source Breakdown Voltage-30V
- Input Capacitance (Ciss) (Max) @ Vds6200pF @ 15V
- Current - Continuous Drain (Id) @ 25°C60A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-XDSO-C5
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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