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SI7997DP-T1-GE3

  • In Stock: 52300
  • Available: 83104

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.20000US $2.20
10+US $1.98000US $19.80
30+US $1.54000US $46.20
100+US $1.26500US $126.50
500+US $1.21000US $605.00
1000+US $1.10000US $1100.00

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI7997DP-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Height
    1.12mm
  • Weight
    506.605978mg
  • FET Type
    2 P-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2015
  • Resistance
    5.5mOhm
  • FET Feature
    Standard
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Affected
  • Mounting Type
    Surface Mount
  • Terminal Form
    C BEND
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    PowerPAK® SO-8 Dual
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    40 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    SI7997
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    3.5W
  • Threshold Voltage
    -2.2V
  • Number of Elements
    2
  • Turn On Delay Time
    15 ns
  • Vgs(th) (Max) @ Id
    2.2V @ 250μA
  • Turn-Off Delay Time
    115 ns
  • Qualification Status
    Not Qualified
  • Element Configuration
    Dual
  • Max Power Dissipation
    46W
  • Operating Temperature
    -55°C~150°C TJ
  • Reach Compliance Code
    unknown
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    5.5m Ω @ 20A, 10V
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    60A
  • Gate Charge (Qg) (Max) @ Vgs
    160nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    45 mJ
  • Continuous Drain Current (ID)
    -20.8A
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    30V
  • Pulsed Drain Current-Max (IDM)
    100A
  • Drain to Source Breakdown Voltage
    -30V
  • Input Capacitance (Ciss) (Max) @ Vds
    6200pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    60A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-XDSO-C5
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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