SI8901EDB-T2-E1
- Manufacturer's Part No.:SI8901EDB-T2-E1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2P-CH 20V 3.5A 6-MFP
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 12399
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI8901EDB-T2-E1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- FET Type2 P-Channel (Dual) Common Drain
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2011
- Rise Time2.2μs
- Rds On Max60 mΩ
- Resistance60mOhm
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormBALL
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / Case6-MICRO FOOT®CSP
- Fall Time (Typ)2.2 μs
- Terminal FinishTIN SILVER COPPER
- Base Part NumberSI8901
- Power Dissipation1.7W
- Terminal PositionBOTTOM
- Threshold Voltage-450mV
- Number of Elements2
- Turn On Delay Time2.3 μs
- Vgs(th) (Max) @ Id1V @ 350μA
- Turn-Off Delay Time1.3 μs
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation1W
- Operating Temperature-55°C~150°C TJ
- Reach Compliance Codeunknown
- Number of Terminations6
- Transistor ApplicationSWITCHING
- Drain to Source Resistance60mOhm
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)3.5A
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)-4.4A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage20V
- Current - Continuous Drain (Id) @ 25°C3.5A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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