SI9933CDY-T1-GE3
- Manufacturer's Part No.:SI9933CDY-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2P-CH 20V 4A 8-SOIC
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 237500
- Available: 344842
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.43724 | US $0.44 |
10+ | US $0.29149 | US $2.91 |
30+ | US $0.21862 | US $6.56 |
100+ | US $0.17489 | US $17.49 |
500+ | US $0.16032 | US $80.16 |
1000+ | US $0.14575 | US $145.75 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI9933CDY-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width4mm
- Height1.55mm
- Length5mm
- Weight186.993455mg
- FET Type2 P-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2011
- Rise Time50ns
- Resistance58mOhm
- FET FeatureLogic Level Gate
- Nominal Vgs-1.4 V
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusVendor Undefined
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Contact PlatingTin
- Fall Time (Typ)13 ns
- Base Part NumberSI9933
- Factory Lead Time14 Weeks
- Power Dissipation3.1W
- Threshold Voltage-1.4V
- Number of Channels2
- Number of Elements2
- Turn On Delay Time21 ns
- Vgs(th) (Max) @ Id1.4V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time29 ns
- Element ConfigurationDual
- Max Power Dissipation3.1W
- Operating Temperature-50°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs58m Ω @ 4.8A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)4A
- Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)4A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)20V
- Input Capacitance (Ciss) (Max) @ Vds665pF @ 10V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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