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SIA517DJ-T1-GE3

  • In Stock: 84000
  • Available: 370087

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.36771US $0.37
10+US $0.24514US $2.45
30+US $0.18385US $5.52
100+US $0.14708US $14.71
500+US $0.13483US $67.42
1000+US $0.12257US $122.57

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SIA517DJ-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Package / Case
    PowerPAK® SC-70-6 Dual
  • Part Status
    Active
  • Operating Temperature
    -55°C~150°C TJ
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Subcategory
    Other Transistors
  • Base Part Number
    SIA517
  • Number of Terminations
    6
  • Terminal Finish
    Matte Tin (Sn)
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Pin Count
    6
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Lead Free
    Lead Free
  • Published
    2017
  • Pbfree Code
    yes
  • Case Connection
    DRAIN
  • Height
    800μm
  • Length
    2.05mm
  • Width
    2.05mm
  • Weight
    28.009329mg
  • Max Power Dissipation
    6.5W
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Transistor Application
    SWITCHING
  • Power Dissipation
    1.9W
  • Max Junction Temperature (Tj)
    150°C
  • Number of Channels
    2
  • Turn On Delay Time
    30 ns
  • Turn-Off Delay Time
    30 ns
  • Operating Mode
    ENHANCEMENT MODE
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Drain to Source Voltage (Vdss)
    12V
  • Continuous Drain Current (ID)
    4.5A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    12V
  • FET Type
    N and P-Channel
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    500pF @ 6V
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 8V
  • FET Feature
    Logic Level Gate
  • Rise Time
    25ns
  • Fall Time (Typ)
    25 ns
  • Nominal Vgs
    400 mV
  • Rds On (Max) @ Id, Vgs
    29m Ω @ 5A, 4.5V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • REACH SVHC
    Unknown

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