SIA533EDJ-T1-GE3
- Manufacturer's Part No.:SIA533EDJ-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET N/P-CH 12V 4.5A SC70-6
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 398301
- Available: 383787
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.64800 | US $0.65 |
10+ | US $0.43200 | US $4.32 |
30+ | US $0.32400 | US $9.72 |
100+ | US $0.25920 | US $25.92 |
500+ | US $0.23760 | US $118.80 |
1000+ | US $0.21600 | US $216.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SIA533EDJ-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Height800μm
- Weight28.009329mg
- FET TypeN and P-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2015
- Resistance34MOhm
- FET FeatureLogic Level Gate
- Nominal Vgs400 mV
- Part StatusActive
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CasePowerPAK® SC-70-6 Dual
- Case ConnectionDRAIN
- Base Part NumberSIA533
- Factory Lead Time14 Weeks
- Power Dissipation7.8W
- Threshold Voltage400mV
- Number of Channels2
- Number of Elements2
- Vgs(th) (Max) @ Id1V @ 250μA
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Max Power Dissipation7.8W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations6
- Rds On (Max) @ Id, Vgs34m Ω @ 4.6A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)4.5A
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)12V
- Drain to Source Breakdown Voltage12V
- Input Capacitance (Ciss) (Max) @ Vds420pF @ 6V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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