SIA912DJ-T1-GE3
- Manufacturer's Part No.:SIA912DJ-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2N-CH 12V 4.5A SC70-6
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 13561
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SIA912DJ-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2014
- Rise Time15ns
- Resistance40MOhm
- FET FeatureLogic Level Gate
- Nominal Vgs1 V
- Part StatusObsolete
- Pbfree Codeyes
- Power - Max6.5W
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CasePowerPAK® SC-70-6 Dual
- Case ConnectionDRAIN
- Fall Time (Typ)15 ns
- Base Part NumberSIA912
- Power Dissipation1.9W
- Threshold Voltage1V
- Number of Elements2
- Turn On Delay Time5 ns
- Vgs(th) (Max) @ Id1V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time35 ns
- Element ConfigurationDual
- Max Power Dissipation1.9W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs40m Ω @ 4.2A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs11.5nC @ 8V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)4.5A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)12V
- Drain to Source Breakdown Voltage12V
- Input Capacitance (Ciss) (Max) @ Vds400pF @ 6V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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