SIB911DK-T1-GE3
- Manufacturer's Part No.:SIB911DK-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2P-CH 20V 2.6A SC75-6
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 12186
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SIB911DK-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- FET Type2 P-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2012
- Rise Time45ns
- Resistance295mOhm
- FET FeatureStandard
- Nominal Vgs-1 V
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryOther Transistors
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CasePowerPAK® SC-75-6L Dual
- Case ConnectionDRAIN
- Fall Time (Typ)31 ns
- Base Part NumberSIB911
- Power Dissipation1.1W
- Threshold Voltage-1V
- Number of Elements2
- Turn On Delay Time12 ns
- Vgs(th) (Max) @ Id1V @ 250μA
- Dual Supply Voltage20V
- Radiation HardeningNo
- Turn-Off Delay Time10 ns
- Element ConfigurationDual
- Max Power Dissipation3.1W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs295m Ω @ 1.5A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)1.5A
- Gate Charge (Qg) (Max) @ Vgs4nC @ 8V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)-2.6A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds115pF @ 10V
- Current - Continuous Drain (Id) @ 25°C2.6A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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