SIR440DP-T1-GE3
- Manufacturer’s Part#:SIR440DP-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- ECAD Model:
- Description:MOSFET N-CH 20V 60A PPAK SO-8
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 45483
- Available: 90774
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.29350 | US $2.29 |
10+ | US $1.52900 | US $15.29 |
30+ | US $1.14675 | US $34.40 |
100+ | US $0.91740 | US $91.74 |
500+ | US $0.84095 | US $420.47 |
1000+ | US $0.76450 | US $764.50 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part #SIR440DP-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesTrenchFET®
- Time@Peak Reflow Temperature-Max (s)40
- Package / CasePowerPAK® SO-8
- Part StatusActive
- Operating Temperature-55°C~150°C TJ
- Factory Lead Time14 Weeks
- MountSurface Mount
- Number of Pins8
- PackagingTape & Reel (TR)
- SubcategoryFET General Purpose Powers
- Number of Terminations5
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements1
- Lead FreeLead Free
- Published2015
- Pbfree Codeyes
- Case ConnectionDRAIN
- Height1.04mm
- Length4.9mm
- Width5.89mm
- Weight506.605978mg
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Power Dissipation6.25W
- Number of Channels1
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max6.25W Ta 104W Tc
- Turn On Delay Time45 ns
- Turn-Off Delay Time81 ns
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)47A
- Continuous Drain Current (ID)60A
- Resistance1.55mOhm
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage20V
- Threshold Voltage2.5V
- FET TypeN-Channel
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds6000pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
- Vgs (Max)±20V
- Rise Time29ns
- Fall Time (Typ)48 ns
- Nominal Vgs2.5 V
- Current - Continuous Drain (Id) @ 25°C60A Tc
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Rds On (Max) @ Id, Vgs1.55m Ω @ 20A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- REACH SVHCUnknown
- JESD-30 CodeR-XDSO-C5
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