SIR873DP-T1-GE3

The SIR873DP-T1-GE3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay, designed for a variety of applications including power management, switching, and amplification.

Key Features:

1. Type: N-channel MOSFET
2. Package: The device is housed in a DPAK (TO-252) package, which is a surface-mount type that provides efficient thermal performance and is suitable for automated assembly processes.
3. Voltage Rating: The SIR873DP-T1-GE3 typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
4. Current Rating: It can handle a continuous drain current (I_D) of approximately 60A, which allows it to manage significant power loads effectively.
5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 8.5 mΩ at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation and enhances efficiency.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 2.5V, allowing for easy drive with standard logic levels.
7. Thermal Resistance: The device features a low thermal resistance, which aids in heat dissipation, making it suitable for high-efficiency applications.
8. Switching Speed: The SIR873DP-T1-GE3 is designed for fast switching, which is beneficial in applications requiring rapid on/off control, such as in power supplies and motor drivers.

Applications:

• Power Management: Ideal for DC-DC converters, power supplies, and battery management systems.
• Motor Control: Suitable for driving motors in various applications, including automotive and industrial systems.
• Load Switching: Can be used in load switching applications where efficient control of power delivery is required.

Additional Information:

• RoHS Compliant: The SIR873DP-T1-GE3 is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly.
• Reliability: Vishay is known for its high-quality semiconductor products, and this MOSFET is designed to provide reliable performance in demanding environments.

Overall, the SIR873DP-T1-GE3 is a versatile and efficient N-channel MOSFET suitable for a wide range of electronic applications, providing excellent performance characteristics that meet the needs of modern power electronics.