SIS468DN-T1-GE3

The SIS468DN-T1-GE3 is a high-performance, dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This component is designed for a variety of applications, including power management, switching, and amplification in electronic circuits.

Key Features:

1. Configuration: The SIS468DN-T1-GE3 features a dual N-channel configuration, which means it contains two N-channel MOSFETs in a single package. This design is beneficial for applications requiring compactness and efficiency.

2. Package Type: It is housed in a compact SO-8 (Small Outline 8-lead) package, which allows for easy integration into printed circuit boards (PCBs) while saving space.

3. Voltage and Current Ratings: The device typically supports a maximum drain-source voltage (V_DS) of around 30V and can handle continuous drain current (I_D) ratings of up to 20A, depending on the thermal conditions and PCB layout.

4. R_DS(on): One of the critical specifications of the SIS468DN-T1-GE3 is its low on-resistance (R_DS(on)), which is typically around 10 mΩ. This low resistance minimizes power loss during operation, making it suitable for high-efficiency applications.

5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 1V to 2.5V, allowing for easy drive with low-voltage control signals.

6. Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a maximum junction temperature (T_J) rating of 150°C. This makes it suitable for demanding environments.

7. Applications: The SIS468DN-T1-GE3 is ideal for use in various applications, including:

   • DC-DC converters
   • Power management systems
   • Motor control circuits
   • Load switching
   • Battery management systems

8. RoHS Compliance: The component is RoHS compliant, indicating that it is free from hazardous substances and meets environmental regulations.

Electrical Characteristics:

• Input Capacitance (C_iss): Typically around 2000 pF, which affects the switching speed and efficiency.
• Output Capacitance (C_oss): Generally around 300 pF, influencing the performance in high-frequency applications.
• Reverse Recovery Time (t_rr): This parameter is crucial for applications involving fast switching, and the SIS468DN-T1-GE3 is designed to minimize this time.

Conclusion:

The SIS468DN-T1-GE3 from Vishay is a versatile and efficient dual N-channel MOSFET that offers excellent performance for a wide range of electronic applications. Its low on-resistance, compact package, and robust thermal characteristics make it a preferred choice for engineers looking to optimize power management and switching solutions in their designs.