SISH625DN-T1-GE3

The SISH625DN-T1-GE3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This component is designed for a variety of applications, including power management, switching, and amplification in electronic circuits.

Key Features:

1. Type: N-channel MOSFET
2. Package: The device typically comes in a TO-220 package, which is a standard package for power transistors, providing good thermal performance and ease of mounting.
3. Voltage Rating: The SISH625DN-T1-GE3 has a maximum drain-source voltage (V_DS) rating of around 60V, making it suitable for medium-voltage applications.
4. Current Rating: It can handle a continuous drain current (I_D) of up to 62A, which allows it to manage significant power loads effectively.
5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 10 mΩ, which minimizes power loss during operation and enhances efficiency.
6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 1V to 2.5V, allowing for easy drive with low-voltage control signals.
7. Thermal Characteristics: The device has a high thermal conductivity, with a maximum junction temperature (T_J) of 150°C, which supports reliable operation in demanding environments.
8. Switching Speed: The SISH625DN-T1-GE3 features fast switching capabilities, making it suitable for high-frequency applications.

Applications:

• Power Supply Circuits: Used in DC-DC converters and power management systems.
• Motor Control: Ideal for driving motors in various applications, including automotive and industrial.
• Lighting Control: Can be used in LED drivers and lighting control systems.
• Battery Management: Suitable for battery protection circuits and charging applications.

Additional Information:

• RoHS Compliance: The SISH625DN-T1-GE3 is compliant with RoHS standards, ensuring it is free from hazardous substances.
• Reliability: Vishay is known for its high-quality manufacturing processes, which contribute to the reliability and longevity of their components.

In summary, the SISH625DN-T1-GE3 from Vishay is a robust and efficient N-channel MOSFET that is well-suited for a wide range of power applications, offering excellent performance characteristics and reliability.