SIZ320DT-T1-GE3
- Manufacturer's Part No.:SIZ320DT-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerPAIR®, TrenchFET®
- Description:MOSFET 2N-CH 25V 30/40A 8POWER33
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 3000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.14363 | US $1.14 |
10+ | US $0.76242 | US $7.62 |
30+ | US $0.57181 | US $17.15 |
100+ | US $0.45745 | US $45.75 |
500+ | US $0.41933 | US $209.67 |
1000+ | US $0.38121 | US $381.21 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SIZ320DT-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesPowerPAIR®, TrenchFET®
- ECCNEAR99
- Height800μm
- FET Type2 N-Channel (Dual)
- PackagingTape & Reel (TR)
- Published2017
- FET FeatureStandard
- Part StatusActive
- Power - Max16.7W 31W
- REACH StatusVendor Undefined
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Factory Lead Time14 Weeks
- Number of Channels2
- Vgs(th) (Max) @ Id2.4V @ 250μA
- Operating Temperature-55°C~150°C TJ
- Reach Compliance Codeunknown
- Rds On (Max) @ Id, Vgs8.3m Ω @ 8A, 10V, 4.24m Ω @ 10A, 10V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs8.9nC @ 4.5V, 11.9nC @ 4.5V
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Breakdown Voltage25V
- Input Capacitance (Ciss) (Max) @ Vds660pF @ 12.5V 1370pF @ 12.5V
- Current - Continuous Drain (Id) @ 25°C30A Tc 40A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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