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SMMBF4393LT1G

  • In Stock: 30000
  • Available: 366462

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.70800US $0.71
10+US $0.47200US $4.72
30+US $0.35400US $10.62
100+US $0.28320US $28.32
500+US $0.25960US $129.80
1000+US $0.23600US $236.00

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Description

The SMMBF4393LT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for low-voltage applications and is particularly suitable for switching and amplification purposes in various electronic circuits.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The SMMBF4393LT1G is typically housed in a small SOT-23 package, which is a surface-mount type that allows for efficient space utilization on printed circuit boards (PCBs).
  3. Voltage Rating: The maximum drain-source voltage (V_DS) is around 30V, making it suitable for low to moderate voltage applications.
  4. Current Rating: It can handle a continuous drain current (I_D) of approximately 200 mA, which is adequate for many low-power applications.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage (V_GS) of 10V, which helps in minimizing power loss during operation.
  6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 1V to 3V, allowing for efficient switching at lower gate voltages.
  7. Switching Speed: The device features fast switching capabilities, making it ideal for high-frequency applications.
  8. Thermal Characteristics: The SMMBF4393LT1G has good thermal performance, with a maximum junction temperature (T_J) rating of 150°C, which allows for reliable operation in various thermal environments.

Applications:

The SMMBF4393LT1G is commonly used in applications such as:

  • Power Management: Ideal for DC-DC converters and power supply circuits.
  • Signal Switching: Suitable for switching applications in communication devices and signal processing circuits.
  • Load Switching: Can be used to control loads in consumer electronics and automotive applications.

Electrical Characteristics:

  • Input Capacitance (C_iss): Typically around 50 pF, which contributes to its fast switching performance.
  • Output Capacitance (C_oss): Approximately 10 pF, aiding in efficient operation in high-speed applications.
  • Reverse Transfer Capacitance (C_rss): Generally low, which helps in reducing the overall capacitance seen by the driving circuit.

Conclusion:

The SMMBF4393LT1G from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a variety of low-voltage applications. Its compact size, low on-resistance, and fast switching capabilities make it an excellent choice for designers looking to optimize performance in their electronic circuits.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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