SMMBT3906LT1G
- Manufacturer's Part No.:SMMBT3906LT1G
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- Series:Automotive, AEC-Q101
- Description:TRANS PNP 40V 0.2A SOT23
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- In Stock: 100100
- Available: 1731556
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.54000 | US $0.54 |
10+ | US $0.36000 | US $3.60 |
30+ | US $0.27000 | US $8.10 |
100+ | US $0.21600 | US $21.60 |
500+ | US $0.19800 | US $99.00 |
1000+ | US $0.18000 | US $180.00 |
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- Description
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- Shopping Guide
The SMMBT3906LT1G is a small-signal PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for general-purpose amplification and switching applications. Here’s a detailed description of its key features and specifications:
Package and Form Factor
- Package Type: The SMMBT3906LT1G is typically housed in a SOT-23 package, which is a compact, surface-mount package that allows for efficient use of board space. The SOT-23 package has three terminals and is suitable for automated assembly processes.
Electrical Characteristics
- Type: PNP Transistor
- Maximum Collector-Emitter Voltage (Vce): The maximum voltage that can be applied between the collector and emitter terminals is typically around 40V, making it suitable for a variety of low to moderate voltage applications.
- Maximum Collector Current (Ic): The transistor can handle a maximum collector current of approximately 200mA, allowing it to drive small loads effectively.
- DC Current Gain (hFE): The transistor exhibits a current gain (hFE) in the range of 100 to 300, depending on the collector current, which indicates its efficiency in amplifying input signals.
Thermal Characteristics
- Junction Temperature (Tj): The maximum junction temperature is typically rated at 150°C, which provides a good thermal margin for operation in various environments.
- Thermal Resistance: The thermal resistance from junction to ambient is low, allowing for effective heat dissipation during operation.
Switching Characteristics
- The SMMBT3906LT1G is capable of fast switching speeds, making it suitable for applications that require quick response times, such as in digital circuits or signal processing.
Applications
- General-Purpose Amplification: It can be used in audio amplifiers, RF amplifiers, and other signal amplification circuits.
- Switching Applications: The transistor is suitable for use in switching circuits, such as in relay drivers, LED drivers, and other control applications.
- Signal Processing: It can be utilized in various signal processing applications due to its low noise characteristics.
Additional Features
- Low Noise: The SMMBT3906LT1G is designed to operate with low noise levels, making it ideal for sensitive applications.
- High Reliability: As a product from ON Semiconductor, it is manufactured under strict quality control standards, ensuring high reliability and performance.
Conclusion
The SMMBT3906LT1G is a versatile and reliable PNP transistor suitable for a wide range of electronic applications. Its compact size, efficient performance, and robust specifications make it a popular choice among engineers and designers in the electronics industry.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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