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SMMBT3906LT1G

  • In Stock: 100100
  • Available: 1731556

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.54000US $0.54
10+US $0.36000US $3.60
30+US $0.27000US $8.10
100+US $0.21600US $21.60
500+US $0.19800US $99.00
1000+US $0.18000US $180.00

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Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

The SMMBT3906LT1G is a small-signal PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for general-purpose amplification and switching applications. Here’s a detailed description of its key features and specifications:

Package and Form Factor

  • Package Type: The SMMBT3906LT1G is typically housed in a SOT-23 package, which is a compact, surface-mount package that allows for efficient use of board space. The SOT-23 package has three terminals and is suitable for automated assembly processes.

Electrical Characteristics

  • Type: PNP Transistor
  • Maximum Collector-Emitter Voltage (Vce): The maximum voltage that can be applied between the collector and emitter terminals is typically around 40V, making it suitable for a variety of low to moderate voltage applications.
  • Maximum Collector Current (Ic): The transistor can handle a maximum collector current of approximately 200mA, allowing it to drive small loads effectively.
  • DC Current Gain (hFE): The transistor exhibits a current gain (hFE) in the range of 100 to 300, depending on the collector current, which indicates its efficiency in amplifying input signals.

Thermal Characteristics

  • Junction Temperature (Tj): The maximum junction temperature is typically rated at 150°C, which provides a good thermal margin for operation in various environments.
  • Thermal Resistance: The thermal resistance from junction to ambient is low, allowing for effective heat dissipation during operation.

Switching Characteristics

  • The SMMBT3906LT1G is capable of fast switching speeds, making it suitable for applications that require quick response times, such as in digital circuits or signal processing.

Applications

  • General-Purpose Amplification: It can be used in audio amplifiers, RF amplifiers, and other signal amplification circuits.
  • Switching Applications: The transistor is suitable for use in switching circuits, such as in relay drivers, LED drivers, and other control applications.
  • Signal Processing: It can be utilized in various signal processing applications due to its low noise characteristics.

Additional Features

  • Low Noise: The SMMBT3906LT1G is designed to operate with low noise levels, making it ideal for sensitive applications.
  • High Reliability: As a product from ON Semiconductor, it is manufactured under strict quality control standards, ensuring high reliability and performance.

Conclusion

The SMMBT3906LT1G is a versatile and reliable PNP transistor suitable for a wide range of electronic applications. Its compact size, efficient performance, and robust specifications make it a popular choice among engineers and designers in the electronics industry.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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